The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride

Merawi Tilahun Tegegne

doi:doi:10.11648/j.wjap.20220701.11

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The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride

Merawi Tilahun Tegegne

Published in World Journal of Applied Physics (Volume 7, Issue 1)

Received: 16 January 2021 Accepted: 21 April 2021 Published: 16 February 2022

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Abstract

The diluted magnetic semiconductor, (Ga, Mn) N has recently attracted intense research interest for the purpose of spintronics application. The material is believed to circumvent the difficulty of combining data processing and mass storage facilities in a single crystal besides solving non-volatility problems. The concentration x, of Mn that substitutes for a fraction of Ga in the compound is thought to contribute a large concentration of magnetic moments and holes. The material studied is focused on dilute magnetic semiconductors (DMS) like Ga_1-XMn_XN that play a key role in semiconductor spintronics. Due to their ferromagnetic properties they can be used in magnetic sensors and as spin injectors. The basic problems for applications are, however, the relatively low Curie temperatures of these systems. Therefore, we focus on the understanding of the magnetic properties and on a reliable calculation of Curie temperatures from first principles. We have developed a theoretical framework for calculating critical temperatures by combining first principles calculations and in terms of the Ruderman–Kittel–Kasuya–Yosida quantum spin model in Green’s function approach. Magnetic properties of the group-III nitride semiconductors are introduced here with basic material parameters (temperature, concentration, heat capacity, etc. Temperature dependencies of the spin wave specific heat, inverse magnetic susceptibility and reduced magnetization are determined. Therefore, the dependence of the Neel temperature on the manganese ion concentration is linear thus for our calculation the highest Neel temperature obtained T=146.3k within the concentration of 0.2.

Published in	World Journal of Applied Physics (Volume 7, Issue 1)
DOI	10.11648/j.wjap.20220701.11
Page(s)	1-10
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2022. Published by Science Publishing Group

Keywords

Diluted Magnetic Semiconductor, Spintronics, Manganese Doped Galium Nitride

References

[1]	Gerald, Thaler, JR. 2004, phd dessertation. Development of Gallium Nitridebased Dilute Magnetic Semiconductors for Magneto-Optical Applications.
[2]	Yosida. Theory of Magnetism. Berlin: Springe, 1996.
[3]	Raebigr, Hannes. 2006, Ferromagnetism in (Ga,Mn) As AND (Ga,Mn)N, Auditorium E.
[4]	“Introduction to the magnetic properties of solids”. Chakravarty A. S. 1980, Saha Institute of Nuclear Physics.
[5]	Daniel, C. Mattis. The theory of magnetism. New York: s.n., 1965.
[6]	Electronic Structure and Optical Properties of Semiconductors. Matioli etla. 2009, Journal of Applied Physics.
[7]	Spintronics And Ferromagnetism In Wide-Band-Gap. Dietl et al. 2000, Semiconductor Spintronics Project of Japan Science.
[8]	Nakamura, M. Senoh, S. Nagahma, N. Iwasa, T. Yamada, T. Matsuahita, H. Kiyoku, and Y. Sugimoto,. 1996, Jpn. J. Appl. Phys. pp. 35, 174.
[9]	Optical properties of Mn-doped GaN. Boukortt. 2012, PHYSICAL REVIEW B, pp. 85, 033302.
[10]	Optical properties of III-Mn-V ferromagnetic semiconductors. Burch, D. D. Awschalom, D. N. Basov. 2008, Journal of Magnetism and Magnetic Materials, pp. 1-4.
[11]	Mydosh. An experimental Introduction in Spin Glasses. 1993.
[12]	Zinc Oxide based Diluted Magnetic Semiconductor. Shivaraman, Ramachandran. 2006, phd dessertation.
[13]	Federick, R. Fundamentals of STATISTICAL AND THERMAL Physics, International Edition”. Singapore. 1985.
[14]	Gil. Group III Nitride Semiconductor Compounds. Oxford University Press, England, s.n., 1998.
[15]	High Brightness Violet InGaN/GaN Light Emitting Diodes. Wierer et al, Nakamura and Faso. 2004, 1999, Journal of Applied Physics.
[16]	Farah, A. D. Ga1−xMnxN Magnetic Semiconductors: First-Principles Study. the degree of Master of Science in Physics. 2008.
[17]	Recent progress towards the development of ferromagneticnitride semiconductors for spintronic applications. Newman. 2006., phys. stat. sol. (a) 203, 2729– 2737.

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Merawi Tilahun Tegegne. (2022). The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride. World Journal of Applied Physics, 7(1), 1-10. https://doi.org/10.11648/j.wjap.20220701.11

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Merawi Tilahun Tegegne. The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride. World J. Appl. Phys. 2022, 7(1), 1-10. doi: 10.11648/j.wjap.20220701.11

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Merawi Tilahun Tegegne. The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride. World J Appl Phys. 2022;7(1):1-10. doi: 10.11648/j.wjap.20220701.11

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@article{10.11648/j.wjap.20220701.11,
  author = {Merawi Tilahun Tegegne},
  title = {The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride},
  journal = {World Journal of Applied Physics},
  volume = {7},
  number = {1},
  pages = {1-10},
  doi = {10.11648/j.wjap.20220701.11},
  url = {https://doi.org/10.11648/j.wjap.20220701.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.wjap.20220701.11},
  abstract = {The diluted magnetic semiconductor, (Ga, Mn) N has recently attracted intense research interest for the purpose of spintronics application. The material is believed to circumvent the difficulty of combining data processing and mass storage facilities in a single crystal besides solving non-volatility problems. The concentration x, of Mn that substitutes for a fraction of Ga in the compound is thought to contribute a large concentration of magnetic moments and holes. The material studied is focused on dilute magnetic semiconductors (DMS) like Ga1-XMnXN that play a key role in semiconductor spintronics. Due to their ferromagnetic properties they can be used in magnetic sensors and as spin injectors. The basic problems for applications are, however, the relatively low Curie temperatures of these systems. Therefore, we focus on the understanding of the magnetic properties and on a reliable calculation of Curie temperatures from first principles. We have developed a theoretical framework for calculating critical temperatures by combining first principles calculations and in terms of the Ruderman–Kittel–Kasuya–Yosida quantum spin model in Green’s function approach. Magnetic properties of the group-III nitride semiconductors are introduced here with basic material parameters (temperature, concentration, heat capacity, etc. Temperature dependencies of the spin wave specific heat, inverse magnetic susceptibility and reduced magnetization are determined. Therefore, the dependence of the Neel temperature on the manganese ion concentration is linear thus for our calculation the highest Neel temperature obtained T=146.3k within the concentration of 0.2.},
 year = {2022}
}

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TY - JOUR
T1 - The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride
AU - Merawi Tilahun Tegegne
Y1 - 2022/02/16
PY - 2022
N1 - https://doi.org/10.11648/j.wjap.20220701.11
DO - 10.11648/j.wjap.20220701.11
T2 - World Journal of Applied Physics
JF - World Journal of Applied Physics
JO - World Journal of Applied Physics
SP - 1
EP - 10
PB - Science Publishing Group
SN - 2637-6008
UR - https://doi.org/10.11648/j.wjap.20220701.11
AB - The diluted magnetic semiconductor, (Ga, Mn) N has recently attracted intense research interest for the purpose of spintronics application. The material is believed to circumvent the difficulty of combining data processing and mass storage facilities in a single crystal besides solving non-volatility problems. The concentration x, of Mn that substitutes for a fraction of Ga in the compound is thought to contribute a large concentration of magnetic moments and holes. The material studied is focused on dilute magnetic semiconductors (DMS) like Ga1-XMnXN that play a key role in semiconductor spintronics. Due to their ferromagnetic properties they can be used in magnetic sensors and as spin injectors. The basic problems for applications are, however, the relatively low Curie temperatures of these systems. Therefore, we focus on the understanding of the magnetic properties and on a reliable calculation of Curie temperatures from first principles. We have developed a theoretical framework for calculating critical temperatures by combining first principles calculations and in terms of the Ruderman–Kittel–Kasuya–Yosida quantum spin model in Green’s function approach. Magnetic properties of the group-III nitride semiconductors are introduced here with basic material parameters (temperature, concentration, heat capacity, etc. Temperature dependencies of the spin wave specific heat, inverse magnetic susceptibility and reduced magnetization are determined. Therefore, the dependence of the Neel temperature on the manganese ion concentration is linear thus for our calculation the highest Neel temperature obtained T=146.3k within the concentration of 0.2.
VL - 7
IS - 1
ER -

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Merawi Tilahun Tegegne

Department of Physics, Kebridhar University, Qorahay, Ethiopia

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Merawi Tilahun Tegegne. (2022). The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride. World Journal of Applied Physics, 7(1), 1-10. https://doi.org/10.11648/j.wjap.20220701.11

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ACS Style

Merawi Tilahun Tegegne. The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride. World J. Appl. Phys. 2022, 7(1), 1-10. doi: 10.11648/j.wjap.20220701.11

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AMA Style

Merawi Tilahun Tegegne. The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride. World J Appl Phys. 2022;7(1):1-10. doi: 10.11648/j.wjap.20220701.11

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@article{10.11648/j.wjap.20220701.11,
  author = {Merawi Tilahun Tegegne},
  title = {The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride},
  journal = {World Journal of Applied Physics},
  volume = {7},
  number = {1},
  pages = {1-10},
  doi = {10.11648/j.wjap.20220701.11},
  url = {https://doi.org/10.11648/j.wjap.20220701.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.wjap.20220701.11},
  abstract = {The diluted magnetic semiconductor, (Ga, Mn) N has recently attracted intense research interest for the purpose of spintronics application. The material is believed to circumvent the difficulty of combining data processing and mass storage facilities in a single crystal besides solving non-volatility problems. The concentration x, of Mn that substitutes for a fraction of Ga in the compound is thought to contribute a large concentration of magnetic moments and holes. The material studied is focused on dilute magnetic semiconductors (DMS) like Ga1-XMnXN that play a key role in semiconductor spintronics. Due to their ferromagnetic properties they can be used in magnetic sensors and as spin injectors. The basic problems for applications are, however, the relatively low Curie temperatures of these systems. Therefore, we focus on the understanding of the magnetic properties and on a reliable calculation of Curie temperatures from first principles. We have developed a theoretical framework for calculating critical temperatures by combining first principles calculations and in terms of the Ruderman–Kittel–Kasuya–Yosida quantum spin model in Green’s function approach. Magnetic properties of the group-III nitride semiconductors are introduced here with basic material parameters (temperature, concentration, heat capacity, etc. Temperature dependencies of the spin wave specific heat, inverse magnetic susceptibility and reduced magnetization are determined. Therefore, the dependence of the Neel temperature on the manganese ion concentration is linear thus for our calculation the highest Neel temperature obtained T=146.3k within the concentration of 0.2.},
 year = {2022}
}

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